Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters

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Published 21 April 2005 • Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Yoshihiro Kojima et al 2005 Jpn. J. Appl. Phys. 44 2600 DOI 10.1143/JJAP.44.2600

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1 Department of Quantum Engineering, Nagoya University, Chikusa-ku, Aichi 464-8603, Japan

2 Department of Crystalline Material Science, Nagoya University, Chikusa-ku, Aichi 464-8603, Japan

Dates

  1. Received 15 September 2004
  2. Accepted 20 December 2004
  3. Published

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1347-4065/44/4S/2600

Abstract

The effect of a grid inserted between the anode and the cathode in plasma-enhanced chemical vapor deposition (PECVD) on carbon nanotube (CNT) growth was studied. The optimum grid-cathode distance and grid-cathode voltage were 4 mm and 2–10 V, respectively. Long small-diameter nanotubes were grown under these conditions. The smallest nanotube diameter obtained was 3 nm. However, when the grid-cathode voltage was higher than 10 V, short large-diameter nanotubes were grown. The field emission characteristics of CNTs with a low ON voltage and a high current density were explained by Fowler-Nordheim (FN) tunneling.

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10.1143/JJAP.44.2600