Colossal Electro-Resistance Memory Effect at Metal/La2CuO4 Interfaces

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Published 26 September 2005 • Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Akihito Sawa et al 2005 Jpn. J. Appl. Phys. 44 L1241 DOI 10.1143/JJAP.44.L1241

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Author affiliations

1 Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

2 CREST-JST, Kawaguchi, Saitama 322-0012, Japan

3 Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

4 Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan

Dates

  1. Received 31 August 2005
  2. Accepted 7 September 2005
  3. Published

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Abstract

We have examined the colossal electro-resistance memory effect for the metal/La2CuO4 (M/LCO) junctions with M = Au, Ti, and Al. Among the junctions, the Ti and Al/LCO junctions exhibited hysteretic and nonlinear Schottky-like current–voltage characteristics, whose resistance could also be switched by pulsed voltage stresses. The resistance switching properties are similar to those previously reported in a Ti/Pr0.7Ca0.3MnO3 junctions, and can be attributed to the charging effect at the Schottky-like interface.

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10.1143/JJAP.44.L1241