Raman Spectroscopic Characterization of Tetragonal PbZrxTi1-xO3 Thin Films: A Rapid Evaluation Method for c-Domain Volume

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Published 10 June 2005 • Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Ken Nishida et al 2005 Jpn. J. Appl. Phys. 44 L827 DOI 10.1143/JJAP.44.L827

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Author affiliations

1 Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Tosayamada-cho, Kochi 782-8502, Japan

2 Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

3 Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

Dates

  1. Received 5 April 2005
  2. Accepted 27 April 2005
  3. Published

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Abstract

We present the use of Raman spectroscopy as a rapid and convenient evaluation tool for domain distribution of tetragonal PbZrxTi1-xO3 (PZT) thin films. From polarized Raman analyses of epitaxial PZT thin films with various c-domain volumes, we found that the intensity of the A1(TO) modes linearly scales with the c-domain volume. These observations, as well as the quick and nondestructive characteristics of this technique, clearly imply that Raman spectroscopy has enormous potential to quantify the fraction of c-domain volumes in a wide range of PZT devices.

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10.1143/JJAP.44.L827