GaN Nanowires Synthesized on Si(111) Substrates by Magnetron Sputtering and Ammonification Technique

GaN nanowires are successfully synthesized on Si(111) substrates through ammoniating the Ga₂O₃/ZnO films by radio frequency magnetron sputtering system. X-ray diffraction (XRD), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), and Fourier transform infrared spectroscopy (FTIR) are employed to examine the structural and surface morphological properties of the as-prepared GaN nanowires. The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 60 to 160 nm, which is conducive to the application of nanodevices. The assistance of the volatilization of ZnO buffer layer has a great impact on the growth of GaN nanowires. The growth mechanism is also briefly discussed.