Abstract
The annealing effect on the local structure of diamond-like carbon (DLC) formed by Ga+ focused-ion-beam chemical vapor deposition (FIB-CVD) was investigated by the incidence angle-dependent measurement of the C K-edge near edge X-ray absorption fine structure (NEXAFS) from 0 to 60°. The peak intensity corresponding to the resonance transition of 1s →σ* originating from carbon–gallium bonding markedly increased with incidence angle in the spectra of a FIB-CVD DLC film annealed at 400 °C. This angle dependency was attributable to the movement of residual Ga atoms from the bottom to the neighboring surface of the FIB-CVD DLC film.