Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy

, and

Published 10 August 2007 • Copyright (c) 2007 The Japan Society of Applied Physics
, , Citation Gan Feng et al 2007 Jpn. J. Appl. Phys. 46 L764 DOI 10.1143/JJAP.46.L764

Download Article PDF

Article metrics

168 Total downloads

Share this article

Article and author information

Author affiliations

1 Cooperative Research Center, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan

2 Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan

Dates

  1. Received 2 May 2007
  2. Accepted 5 July 2007
  3. Published

Buy this article in print

Journal RSS
Sign up for new issue notifications
1347-4065/46/8L/L764

Abstract

We have investigated the effect of postgrowth thermal annealing on undoped GaN0.014As0.954Bi0.032/GaAs structures grown by molecular-beam epitaxy. For the as-grown GaN0.014As0.954Bi0.032 film, the room-temperature photoluminescence (PL) spectrum shows poor emission efficiency. The PL intensity can be markedly improved by postgrowth annealing. The optimal annealing temperature is found to be ∼700 °C. A blueshift of the PL peak during annealing was also observed in annealed GaN0.014As0.954Bi0.032 with a maximum value of ∼27 meV. On the basis of high-resolution X-ray diffraction measurements, the mechanism for the blueshift of the GaN0.014As0.954Bi0.032 PL peak during annealing was studied.

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
10.1143/JJAP.46.L764