Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) grown on 150 mm Si(111) substrates are reported in this work. The sheet resistance of the AlGaN/GaN HEMT structure is as low as 260 ±3.4 Ω/□. The electron mobility is in the range of 1560–1650 cm2 V-1 s-1. The crack-free mirror-like wafers were obtained by using a simple AlGaN/AlN buffer. The mechanism for dislocation reduction in GaN above the AlGaN/AlN buffer is presented in this work. The dislocation density is around (1.5–2.5)×109/cm2. Some of the wafers were processed and a current density close to 1 A/mm was achieved. The maximum transconductance was 270 mS/mm and the on-state resistance was as low as 2.6 Ω mm.