Microelectromechanical Systems-Based Electrostatic Field Sensor Using Pb(Zr,Ti)O3 Thin Films

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Published 19 September 2008 • Copyright (c) 2008 The Japan Society of Applied Physics
, , Citation Takeshi Kobayashi et al 2008 Jpn. J. Appl. Phys. 47 7533 DOI 10.1143/JJAP.47.7533

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1 National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan

2 HST Co., Ltd., 2-6-23 Sinyokohama, Kouhoku-ku, Yokohama 222-0033, Japan

Dates

  1. Received 14 May 2008
  2. Accepted 2 July 2008
  3. Published

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Abstract

We have developed microelectromechanical system (MEMS)-based electrostatic field sensors using Pb(Zr,Ti)O3 thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO2 deposited on silicon-on-insulator (SOI) wafers have been fabricated into the sensors through MEMS microfabrication technology. The resonant frequency of the fabricated sensors is within 1700–1800 Hz. The developed MEMS-based electrostatic field sensors have shown a good linear response to the voltage of an electrified body, which is comparable to that of commercially available electrostatic field sensors.

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10.1143/JJAP.47.7533