Effect of Thermal Annealing on Structural, Electrical, and Magnetic Properties of Ag-doped La0.67Ca0.33MnO3 Thin Films Grown on LaAlO3 Substrates

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Published 8 February 2006 • Copyright (c) 2006 The Japan Society of Applied Physics
, , Citation Peng-Xiang Zhang et al 2006 Jpn. J. Appl. Phys. 45 727 DOI 10.1143/JJAP.45.727

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1 Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming, Yunnan 650051, China

2 Advanced Semiconductor Research Center, Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea

3 Max-Planck-Institut für Festkörperforschung, D-70506 Stuttgart, Germany

Dates

  1. Received 25 October 2005
  2. Accepted 10 November 2005
  3. Published

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Abstract

Resistance as a function of temperature showed that the metal–insulator transition temperatures of as-grown and annealed Ag-doped La0.67Ca0.33MnO3 thin films were 235 and 300 K, respectively, and that the metal–insulator transition ranges of these films were relatively narrow, indicative of a sharp phase transition. The temperature coefficient of resistance was as high as 8% at 276 K. The magnetoresistance ratio of the annealed Ag-doped film under a magnetic field of 5 T was approximately 55% at 285 K.

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10.1143/JJAP.45.727