Abstract
In this study, various surface cleaning techniques for the removal of carbon (C) and oxygen (O) from AlN and GaN were investigated. Auger electron spectroscopy (AES) and secondary mass ion spectroscopy were used to monitor the presence of surface C and O, and atomic force microscopy was used to monitor surface roughness. AES analysis showed that ex situ ultraviolet/ozone 
and wet chemical treatments based on HF and HCl were very effective in removing surface C and reducing the native oxide on both AlN and GaN. After 
and 
plasma treatments in ultrahigh vacuum at temperatures of 750 and 900°C, clean GaN surfaces could be achieved within the detection limits of AES. An oxygen‐free AlN surface could not be obtained within the detection limits of AES. SIMS analysis showed that concentrations of surface C and O up to 
and 
, respectively, still exists on plasma‐treated GaN. The results of this study indicate that ex situ 
followed by 
plasma treatment is highly effective in reducing the C and O contamination at the GaN surface, but that further in situ methods are needed to obtain clean GaN and AlN surfaces. None of the various cleaning methods were found to affect the surface roughness. © 2000 The Electrochemical Society. All rights reserved.