Abstract
We have fabricated 14.1% efficient 
(CIGS) based devices from electrodeposited precursors. As‐deposited precursors are Cu‐rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to 
. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high‐efficiency devices. The X‐ray analysis of the as‐deposited precursor film indicates the presence of CIGS and 
phases. The X‐ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X‐ray diffraction, electron‐probe microanalysis, current‐voltage characteristics, capacitance‐voltage, and spectral response.