Thick Film ZnO Resistive Gas Sensors: Analysis of Their Kinetic Behavior

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© 1989 ECS - The Electrochemical Society
, , Citation S. Pizzini et al 1989 J. Electrochem. Soc. 136 1945 DOI 10.1149/1.2097092

1945-7111/136/7/1945

Abstract

Thick film polycrystalline gas sensors for hydrogen partial pressure determination in hydrogen‐air mixtures present a very complex kinetic behavior that demands to be thoroughly clarified in order for them to be used in practical applications. For this reason a systematic investigation has been carried out on the time and temperature dependence of the electrical conductivity of films deposited via spray pyrolysis on ceramic substrates in the temperature range 498‐573 K in the presence of dispersed Pt as the catalyst. Results of this investigation show that the hydrogen‐assisted reaction of desorption of surface chemisorbed oxygen occurs in parallel with a reaction of direct reduction in the whole range of temperatures investigated. When accounting for this parasitic reaction, a good fit of the partial pressure and time dependence of the electrical conductivity with the theoretical predictions has been observed by assuming a conductivity dominated by Schottky barriers at grain boundaries.

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