The Criterion for Stability of a Planar Alloy‐Oxide Interface upon Oxidation of Binary Alloys

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© 1976 ECS - The Electrochemical Society
, , Citation D. P. Whittle et al 1976 J. Electrochem. Soc. 123 1073 DOI 10.1149/1.2132998

1945-7111/123/7/1073

Abstract

Linear perturbation theory is used to analyze the stability of a moving planar alloy‐oxide interface when oxidation of a binary solid solution alloy leads to growth of a superficial metal conducting oxide scale. The transport equations for metal and oxygen in the alloy and oxide phases are analyzed under limiting approximations consistent with ternary diffusion theory. If oxygen diffusion in the alloy occurs predominantly down its own gradient the stability criterion for a planar interface is

This criterion becomes in the case of oxygen diffusion in the alloy occurring predominantly from its interaction with the metal gradient

In these expressions, , , and represent self‐diffusion coefficients, mole fractions, and molar volumes of the alloy and oxide phases denoted by superscript I and II , respectively. Asterisks on these parameters refer to values at a planar alloy‐oxide interface. A and O refer to the selectively oxidized metal component and oxygen. is the initial concentration of A, and is the Wagner interaction coefficient between oxygen and A in the alloy.

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10.1149/1.2132998