Abstract
Phosphorus, arsenic, and argon ions were implanted into thermally grown 
layers with energies up to 115 keV. The effect of the implantations, its dependence upon dose, and the anneal behavior were studied by IR absorption and ellipsometric measurements. Observed effects are mainly due to radiation damage. A saturation of the damage is observed in the amorphous silica which up to now has only been observed in crystalline materials. Two annealing processes can be distinguished beginning near 100° and near 300°C. Results are compared with the annealing of 
produced by implantation. Models are proposed to describe the observed shift of absorption bands and the anneal behavior.