Abstract
The film growth conditions were optimized for pulsed laser deposited ZnO thin films for high performance field effect transistor applications. Transistors fabricated on Si and GaAs substrates with various gate lengths and gate widths and demonstrated current on/off ratios better than 1012, current density of >700mA/mm, sub-threshold gate voltage slope of 109mV/decade, current gain cutoff frequency of 500MHz, and power gain cutoff frequency of 400MHz (2um gate device).