Abstract
Deposition of silicon nitride films on 
by RF magnetron reactive sputtering of an elemental silicon target in a nitrogen/argon 1:1 plasma has been investigated. Deposition parameters, such as power density and total gas pressure, have been studied in relation to film atomic composition, oxygen contamination, stress, and the critical electric field. The refractive index, measured by ellipsometry, has been correlated to the film composition measured by nuclear reaction analysis. AES profiling of the 
interfaces after annealing (850°C) showed that magnetron sputtered silicon nitride films are suitable for encapsulation. Furthermore, preliminary electrical results of annealed materials showed that, under correct deposition parameters, critical fields as high as 
are readily attainable.