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Structural and Optical Properties of Solution Grown CdSe1 − x  S x Films

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© 1982 ECS - The Electrochemical Society
, , Citation R. C. Kainthla et al 1982 J. Electrochem. Soc. 129 99 DOI 10.1149/1.2123800

1945-7111/129/1/99

Abstract

films have been prepared in the entire composition range from to by using a chemical solution growth technique. Optimum conditions to deposit good quality films have been determined. Structural and optical properties of the films have been studied. Electron diffraction analysis shows that the films have predominantly cubic (sphalerite) structure. The lattice parameter varies continuously from 5.81Å for to 6.06Å for films. The films have a direct bandgap, which varies continuously from 2.44 eV for to 1.74 eV for films.

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10.1149/1.2123800