In Situ Monitoring of Liquid Phase Electroepitaxial Growth

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© 1982 ECS - The Electrochemical Society
, , Citation A. Okamoto et al 1982 J. Electrochem. Soc. 129 2095 DOI 10.1149/1.2124376

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1 Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Dates

  1. Received 18 January 1982
  2. Revised 18 February 1982

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Abstract

In situ monitoring of the layer thickness during liquid phase electroepitaxy (LPEE) was achieved with a submicron resolution through precise resistance measurements. The new approach to the study and control of LPEE was applied to growth of undoped and Ge‐doped layers. The in situ determined growth kinetics was found to be in excellent agreement with theory.

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