Abstract
Arsine and phosphine were decomposed in a high temperature leak‐source to provide 
and 
molecular beams for molecular beam epitaxy of 
and 
. Reasonable growth rates (0.5–1.5 μm/hr) were achieved for both semiconductors. The studies demonstrated that with this method, MBE of
can be done with the substrate temperature as high as 700°C. The maximum growth temperature obtained for 
was approximately 600°C. A reasonable increase in leak rate at the source should permit 
at 750°C and 
at 650°C.