Abstract
Cadmium selenide and lead selenide films have been deposited by a solution growth technique on single crystal germanium and silicon, glass, mica, and copper substrates. The effect of bath parameters (pH, temperature, and relative concentration of reactants) and the nature of the substrate on the rate of deposition and terminal thickness has been established. The structure of the films has also been studied. Based on the experimental results, a growth model has been proposed.