Crystal Growth and Segregation under Zero Gravity: Ge

, , and

© 1978 ECS - The Electrochemical Society
, , Citation A. F. Witt et al 1978 J. Electrochem. Soc. 125 1832 DOI 10.1149/1.2131306

1945-7111/125/11/1832

Abstract

Crystal growth and segregation in space were quantitatively investigated in a Bridgman‐type configuration. It was established that the segregation behavior is diffusion controlled without interference from residual gravity, G‐jitter, and surface tension gradients. Radial and longitudinal segregation effects were accounted for by a lateral diffusional dopant redistribution within the diffusion boundary layer brought about by the nonplanar morphology of the growth interface.

Export citation and abstract BibTeX RIS

10.1149/1.2131306