Abstract
Abstract not Available.
Vapor Phase Epitaxial Growth of GaN on GaAs , GaP , Si, and Sapphire Substrates from GaBr3 and NH 3
Yasuo Morimoto1, Kosuke Uchiho1 and Shintaro Ushio1
© 1973 ECS - The Electrochemical Society
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Citation Yasuo Morimoto et al 1973 J. Electrochem. Soc. 120 1783
DOI 10.1149/1.2403365
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