Aluminum Nitride Containers for the Synthesis of GaAs

High‐purity aluminum nitride refractory ware has been produced for use as containers in the synthesis of semiconductor gallium arsenide. Use of these containers essentially eliminates contamination of the with silicon, as is usually encountered when the synthesis is carried out in quartz. The principal problem encountered in the use of this material is wetting by the molten gallium and , which results in sticking of the solidified ingot. This problem is circumvented if synthesis is carried out in crucibles from which the charge is subsequently drawn by Czochralski techniques. Room temperature mobilities of 7000–8000 cm²/volt‐sec have been reported in synthesized in these crucibles.