Abstract
Crystallization of amorphous anodic oxide films on tantalum may be accomplished by holding at temperatures in the neighborhood of room temperature provided a strong electric field is present in the film. This results in crystalline areas consisting of pie‐shaped polycrystalline segments surrounded by coiled‐up cylinders of the replaced amorphous phase. Factors affecting the nucleation and growth of these areas are discussed, and a mechanism of growth is proposed. The nucleation of the areas is not understood at present.