Kinetic Monte Carlo Simulation of Via Filling: Role of Chloride Ions

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© 2008 ECS - The Electrochemical Society
, , Citation Yutaka Kaneko et al 2008 ECS Trans. 13 1 DOI 10.1149/1.2993338

1938-5862/13/12/1

Abstract

The influence of chloride ions on the filling process of via holes has been studied with use of a kinetic Monte Carlo method. Four kinds of additives (inhibitors, accelerators, levelers and chloride ions) are included in the solid-by-solid model for crystal growth as a model of copper electrodeposition. It is assumed that the chloride ions are adsorbed on the metal surface and the adsorption of the inhibitors and the accelerators occurs through the interaction with the surface chloride ions. The binding energy of the chloride ions with the accelerators is assumed to be larger than that with the inhibitors. We performed a series of simulations to study the synergistic effects of the chloride ions and the other additives on the film structures. The effect of convection is also taken into account to improve the filling condition. The mechanism of superfilling is discussed from a microscopic point of view.

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10.1149/1.2993338