Electrodeposition of In–Se and Ga–Se Thin Films for Preparation of CIGS Solar Cells

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Published 13 February 2009 © 2009 ECS - The Electrochemical Society
, , Citation Serdar Aksu et al 2009 Electrochem. Solid-State Lett. 12 D33 DOI 10.1149/1.3079481

1944-8775/12/5/D33

Abstract

An approach was developed for electrochemical codeposition of In–Se and Ga–Se films with high repeatability and controllable and molar ratios to prepare precursor layers for copper indium gallium diselenide (CIGS) film formation by two-stage processes. Full potential of complexation was used for the first time by using aqueous electroplating solutions containing complexing agents at alkaline regime. It was found that tartrate and citrate were suitable complexing agents to solubilize In and Ga ions at high pH, respectively. Because no appreciable complexation of Se occurred, Se reduction potential could be independently controlled by the amount of dissolved Se. Use of alkaline solutions also reduced hydrogen bubble generation and related defects.

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10.1149/1.3079481