Abstract
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we present the basic concept on the choice of channel materials for high performance MOSFETs and address the expectation of Ge/III-V MOSFETs on the Si platform. We briefly review the present status and the critical issues of Ge/III-V MOS devices. Several key technologies, which are expected to make this heterogeneous integration of Ge/III-V MOSFETs possible, are introduced.