Abstract
Spectroscopic Ellipsometry (SE) was used to characterize the complex refractive index of Chemical Vapor Deposition (CVD) graphene grown on copper (Cu) foils and transferred to glass and SiO2/Silicon substrates. Previously, we reported the complex refractive index of single layer graphene on glass substrates. Here, we describe the challenges in characterizing the optical properties of graphene on SiO2/Silicon substrates. We also discuss whole measurements of patches of graphene on 300 mm silicon wafers. This establishes the ability of in-line metrology methods to measure graphene thickness. This builds on previous use of an Effective Medium Approximation (EMA) for optical dispersion modeling of incomplete graphene films.