Double-Gate Junctionless Transistor for Analog Applications

In this paper, analog performance of short channel symmetric double-gate junctionless transistor (DGJLT) is reported for the first time. The analog performance parameters, namely drain current (I_D ), transconductance (G_m ), transconductance/drain current ratio (G_m /I_D ), early voltage (V_EA ), drain output conductance (G_D ), output resistance (R_O ), intrinsic gain (G_m R_O ), gate to source capacitance (C_GS ), gate to drain capacitance (C_GD ) and unity gain cut-off frequency (f_T ) for the n-type DGJLT are systematically investigated with the help of extensive device simulations and are compared with conventional inversion mode symmetric double-gate transistor (DGMOS) of similar dimensions. DGJLT offers superior transconductance/drain current ratio and intrinsic gain in the subthreshold region than its inversion mode counterpart having same dimensions. However, DGMOS presents higher unity gain cut-off frequency which makes it suitable for high speed applications as compared to a DGJLT transistor.