Effect of Annealing Temperature on Band Gap of ZnO and Carbon Doped ZnO Thin Films
ZnO and Carbon doped nano ZnO thin film (CZO) was deposited on glass substrate by spin coating method with zinc acetate dihydrate and glucose as the source of carbon. The films were annealed at different temperatures of 250 °C, 300 °C and 350 °C. The structure of the films
and nanosize, dislocation density were analysed by X-ray diffraction. The optical band gap was determined using Taucs plot as 3.3 eV and 2.95 eV respectively for ZnO and C–ZnO respectively. The optical band gap was decreased by 10.6% due to 0.1 wt% of glucose, and by 6.4% with annealing
temperature of 350 °C for ZnO.
Keywords: BAND GAP; CARBON; SPIN COATING; TAUC'S PLOT; ZNO
Document Type: Research Article
Publication date: 01 February 2015
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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