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Optoelectronic Characterization of Trivalent Europium Doped Gd2O3 and MGd2O4 (M = Ba or Sr) Nanophosphors for Display Device Applications

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Trivalent europium doped Gd2O3 and MGd2O4 (M = Ba, Sr) nanophosphors were synthesized by facile gel combustion process using hexamethylenetetramine as an organic fuel. The incorporation of Eu3+ ions in these materials had been studied by their photoluminescence properties. All these synthesized powders [Gd2O3 and MGd2O4 (M = Ba, Sr)] showed intense red emission due to 4f → 4f transitions of Eu3+ ions. The emission spectra of prepared materials showed five peaks at ∼581, 593, 612, 629, 652 and 708 nm. The main intense emission peak exhibited at 612 nm was attributed to 5D07F2 the electric dipole transition of Eu3+ ion. The concentration quenching was also observed when activator concentration was added more than 4 mol% in these samples. The photoluminescence intensity for these materials were found to be increased with increase of sintering temperature and showed a maximum intensity when these sample were reheated at 1100 °C. The structure and morphology of these prepared materials had been examined by X-ray diffraction and tunneling electron microscopy respectively.

Keywords: FACILE GEL COMBUSTION SYNTHESIS; HEXAMETHYLENETETRAMINE; NANOPHOSPHORS; PHOTOLUMINESCENCE; TUNNELING ELECTRON MICROSCOPY

Document Type: Research Article

Publication date: 01 June 2016

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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