Direct Nanoscale Observation of Resistance Switching with Au Nano-Dots Embedded Nb2O5 by Scanning Tunneling Microscopy
Resistance switching phenomena in metal oxides shall play an important role in next-generation non-volatile memory devices. Although it has been reported in the literature that the current flow in oxides in high-conductivity state occurs through localized filaments, reports on experimental
evidence for current flow through filaments is limited. In this work, we use scanning tunneling microscopy to show the formation and/or rupture of nano filaments in Pt/Nb2O5/TiN system during resistive switching. SET/RESET operations were studied at nanoscale using by
a Pt-Ir tip.
Keywords: CONDUCTING FILAMENT; NANODOTS; RESISTIVE SWITCHING; RRAM; STM
Document Type: Research Article
Publication date: 01 April 2012
- Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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