Abstract
A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.
Conference
International Symposium on Plasma Chemistry, International Symposium on Plasma Chemistry, ISPC, Plasma Chemistry, 15th, Orléans, France, 2001-07-09–2001-07-13
Published Online: 2009-01-01
Published in Print: 2002-01-01
© 2013 Walter de Gruyter GmbH, Berlin/Boston
