Abstract

Sharply peaked near-field sidelobes are formed when the input optical field pattern interacts with the edges of the current stripe in a semiconductor laser amplifier. The strength of this interaction is shown theoretically to depend principally on the first and second derivatives of the transverse current profile, and hence one can suppress the sidelobes by smoothing the sharp edges in the current injection.

© 1995 Optical Society of America

Effect of carrier depletion on optical phase conjugation in a semiconductor laser amplifier

Senfar Wen and Sien Chi
Opt. Lett. 20(6) 590-592 (1995)

Nonequilibrium and many-body Coulomb effects in the relaxation oscillation of a semiconductor laser

W. W. Chow
Opt. Lett. 20(22) 2318-2320 (1995)

Room-temperature amplitude-squeezed light from an injection-locked quantum-well laser with a time-varying drive current

M. J. Freeman, D. C. Kilper, D. G. Steel, R. Craig, and D. R. Scifres
Opt. Lett. 20(2) 183-185 (1995)

Soliton transmission control with semiconductor amplifiers

Antonio Mecozzi
Opt. Lett. 20(15) 1616-1618 (1995)

Self-induced channeling of subpicosecond optical pulses in broad-area bulk semiconductor amplifiers

R. A. Indik, J. V. Moloney, R. Binder, A. Knorr, and S. W. Koch
Opt. Lett. 20(22) 2315-2317 (1995)