e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Regular Papers
Establishing the Relationship between Substrate Bias Voltage and Formation Process of Single Component Ion-Plasma's Film Based on Tin by Electric-Arc Evaporation
Anna L. KamenevaL'ybov N. GuselnikovaTatyana O. Soshina
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2011 Volume 9 Pages 34-39

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Abstract

Influence of substrate bias voltage on temperature conditions, formation stages, structure formation processes and prevailing orientation of titanium nitride films in the course of electric-arc evaporation was investigated. Increase in substrate bias voltage was found to accelerate considerably the formation stages of poly-crystalline TiN films with prevailing crystallographic orientation (111). Degree of prevailing orientation and crystallinity increases with substrate bias voltage. Optimum temperature range of polycrystalline (111)TiN films is 645-725 K. [DOI: 10.1380/ejssnt.2011.34]

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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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