Abstract
Zero phonon line (ZPL) shape, position and integral intensity of SiV defect center in diamond is presented for nanocrystalline diamond (NCD) films grown at different conditions, NCD films of average grain sizes from ~50 nm up to ~180 nm have been deposited onto c-Si wafer at substrate temperature of 700 and 850oC from mixture with different CH4 and H2 ratios using MWCVD process. Light emission of SiV defect center and Raman scattering properties of NCD samples were measured on a Renishaw micro-Raman spectrometer with 488 nm excitation. Scanning electron microscopy images were used for monitoring surface morphology and for the analysis of the average grain sizes. Sample thickness was determined by in situ laser reflection interferometry. Characteristics of SiV ZPL are discussed in light of the morphology, bonding structure and average grain size of NCD films.
References
[1] Kurtsiefer C., Mayer S., Zarda P., Weinfurter H., Phys. Rev. Lett., 2000, 85, 290 10.1103/PhysRevLett.85.290Search in Google Scholar PubMed
[2] Beveratos A., R. Brouri, Gacoin T., Willing A., Poizat J.P., Grangier P., Phys. Rev. Lett., 2002, 89, 187901 10.1103/PhysRevLett.89.187901Search in Google Scholar PubMed
[3] Jelezko F., Gaebel T., Popa I., Domhau M., Gruber A., Wrachtrup J., Phys. Rev. Lett., 2004, 93, 130501 10.1103/PhysRevLett.93.130501Search in Google Scholar PubMed
[4] Ho D. (Ed.), Nanodiamonds, Applications in Biology and Nanoscale Medicine, Springer, New York, 2010 10.1007/978-1-4419-0531-4Search in Google Scholar
[5] Chance B., Cope M., Gratton E., Ramanujam N., Tromberg B., Review of Scientific Instruments, 1998, 69(10), 3457 10.1063/1.1149123Search in Google Scholar
[6] Wang C., Kurtsiefer C., Weinfurter H., Burchard B., J. Phys. B, 2006, 39, 37 10.1088/0953-4075/39/1/005Search in Google Scholar
[7] Vlasov I.I., Barnard A.S., Ralchenko V.G. et al., Adv. Mater., 2009, 21, 808 10.1002/adma.200802160Search in Google Scholar
[8] Gaebel T., Popa I., Gruber A., Domhan M., Jelezko F., Wrachtrup D., New J. Phys., 2004, 6, 98 10.1088/1367-2630/6/1/098Search in Google Scholar
[9] Wang C., Kurtsiefer C., Weinfurter H., Burchard B., J. Phys. B: At. Mol. Opt. Phys., 2006, 39, 37 10.1088/0953-4075/39/1/005Search in Google Scholar
[10] Sedov V.S., Vlasov I.I., Ralchenko V.G., Khomich A.A., Konov V.I., Fabbri A.G., Conte G., Bull. Lebedev Phys. Inst., 2011, 38, 291 10.3103/S1068335611100034Search in Google Scholar
[11] May P.W., Ashfold M.N.R., Mankelevich Yu.A., J. Appl. Phys., 2007, 101, 053115 10.1063/1.2696363Search in Google Scholar
[12] Borges C.F.M., Moisan M., Gicquel A., Diam. Rel. Mat., 1995, 4, 149 10.1016/0925-9635(94)00237-1Search in Google Scholar
[13] Locher R., Wild C., Herres N., Behr D., Koidl P., Appl. Phys. Lett., 1994, 65, 34 10.1063/1.113064Search in Google Scholar
[14] Nistor S.V., Stefan M., Ralchenko V., Khomich A., Schoemaker D., J. Appl. Phys. 2000, 87, 8741 10.1063/1.373604Search in Google Scholar
[15] Yugo S., Kanai T., Kimura T., Muto T., Appl. Phys. Lett., 1991, 58, 1036 10.1063/1.104415Search in Google Scholar
[16] Butler J.E., Sumant A.V., Chem. Vap. Dep., 2008, 14, 146 10.1002/cvde.200700037Search in Google Scholar
[17] Mishra P., Jain K.P., Phys. Rev. B, 2001, 64, 073304 10.1103/PhysRevB.64.073304Search in Google Scholar
[18] Brillante A. et al., Physica, 1986, 139, 533 10.1016/0378-4363(86)90641-8Search in Google Scholar
[19] Clark C., Dickerson C., Surf. Coat. Tech., 1991, 47, 336 10.1016/0257-8972(91)90299-CSearch in Google Scholar
[20] Edwards A.M., Newton M.E., Martnean P.M., Twitchen D.J., Williams S.D., Phys. Rev. B, 2008, 77, 245205 Search in Google Scholar
© 2015 László Himics et al.
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
