Skip to content
BY-NC-ND 3.0 license Open Access Published by De Gruyter November 23, 2012

Thermodynamics of Phosphorus Removal from Silicon in Solvent Refining of Silicon

  • Leili Tafaghodi Khajavi EMAIL logo and Mansoor Barati

Abstract

Refining of silicon for solar applications using metallurgical approaches has attracted a considerable attention in the recent years. The present study involves employing solvent refining as a purification technique in which silicon recrystallization takes place from an iron-silicon alloy melt. It is believed that iron will perform as the impurity “getter” and purified silicon crystals grow from the alloy melt, while the impurities are segregated to the liquid alloy. The focus of this article is on removal of phosphorus, as a critical impurity in solar silicon. In order to assess the feasibility and efficiency of phosphorus removal through solvent refining, the distribution of phosphorus between solid Si and Fe-Si melt at 1483–1583 K (1210–1310 °C) was measured. Interaction parameter between phosphorus and iron was calculated by varying the concentration of phosphorus at each temperature.


University of Toronto, Department of Materials Science and Engineering, 184 College Street, Suite 140; Toronto, Ontario M5S 3E4, Canada

Received: 2012-05-18
Accepted: 2012-07-12
Published Online: 2012-11-23
Published in Print: 2012-10-30

©[2012] by Walter de Gruyter Berlin Boston

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Downloaded on 30.4.2024 from https://www.degruyter.com/document/doi/10.1515/htmp-2012-0100/html
Scroll to top button