Abstract
Ultrathin lanthanide (Nd, Pr, Eu, Sm) oxide films with functional dielectric properties down to 3.3 nm thickness were deposited by aqueous chemical solution deposition (CSD) onto hydrophilic SiO2/Si substrates. Precursor solutions were prepared from the oxides via an intermediate, solid Ln(III)citrate. A film heat treatment scheme was derived from thermogravimetric analysis of the precursor gels, showing complete decomposition by 600 °C. Crystalline phase formation in the films depended on the lanthanide, annealing temperature, and citric acid content in the precursor. Through variation of the precursor concentration and number of deposited layers, thickness series of uniform films were obtained down to ∼3 nm. The film uniformity was demonstrated both by atomic force microscopy and cross-section transmission electron microscopy. The lanthanide oxide films possessed good dielectric properties. It was concluded that aqueous CSD allows deposition of uniform ultrathin films and may be useful for the evaluation of new high-k candidate materials.
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Acknowledgments
The authors thank Dr. G. Vanhoyland for the XRD work on the lanthanide citrates. M.K. Van Bael and A. Hardy are postdoctoral research fellows of the Research Foundation Flanders (FWO-Vlaanderen). This work is supported by the FWO research project G.0273.05. The research was partly performed in the framework of the projects 1.2.16/D2/841 and 1.2.14/PO/841 of the Objective 2 programme for Limburg (Belgium) of the European Regional Development Fund with title “Integrated Material Research for Development and Application in the Automotive Sector.”
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Hardy, A., Van Elshocht, S., D’Haen, J. et al. Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films. Journal of Materials Research 22, 3484–3493 (2007). https://doi.org/10.1557/JMR.2007.0433
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DOI: https://doi.org/10.1557/JMR.2007.0433