Abstract
The relation of relaxation to surface morphology in linearly-graded InAlAs was examined as a function of growth temperature using x-ray diffraction and atomic force microscopy (AFM). Samples were grown at temperatures ranging from 370°C to 550°C. Weak diffraction features for samples grown at 370°C and 420°C limited determination of the extent of their relaxation. The fractional relaxation of samples grown between 470°C to 550°C was essentially identical (~77%) and symmetric in orthogonal <110> directions. The character of the surface morphology changed from random small scale roughness to a roughness more periodic in nature as the growth temperature increased. Although no asymmetry was observed in the relaxation, the roughness developed an asymmetry at higher growth temperatures with more prominent ridges along \(\left[ {\bar 110} \right] - \left[ {1\bar 10} \right]\).
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Acknowledgments
The authors wish to thank Kevin Kjoller of Digital Instruments for useful technical discussions on the AFM. J.A. Olsen gratefully acknowledges fellowship support from the Association of Western Universities. The work performed at Sandia National Laboratories is supported by the U.S. Department of Energy under contract DE-AC04-94AL-85000.
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Olsen, J.A., Hu, E.L., Lee, S.R. et al. Strain Relaxation and Surface Roughness as a Function of Growth Temperature in Linearly Graded InxAl1-xas (x=0.05 to 0.25) Buffers. MRS Online Proceedings Library 326, 395–400 (1993). https://doi.org/10.1557/PROC-326-395
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DOI: https://doi.org/10.1557/PROC-326-395