Abstract
High quality diamond thin films were deposited on different substrates at temperatures from 300 to 1000 °C by the microwave plasma enhanced chemical vapor deposition (MPCVD) system. The quality of deposited diamond films was improved by adding oxygen in the gas mixtures. Different ratios of methane to oxygen concentration in hydrogen at different temperatures have been studied. At high temperatures (800–1000 °C), the addition of oxygen will not only enhance the growth rate of deposited films but also extend the region of diamond formation. At low temperatures (<500 °C), the oxygen plays an important role in diamond film growth by preferentially etching the non-diamond carbon. Without the addition of oxygen, the films deposited at high temperatures (>900 °C) were either graphitic or diamond containing a large amount of graphitic or amorphous carbon and at low temperatures (<500 °C) were white, soot-like coatings which were easily scraped off. The quality of the deposited films was characterized by Raman spectroscopy and scanning electron microscopy.
Similar content being viewed by others
References
B.V. Spitsyn, L. L. Bouilov, and B.V. Derjaguin, J. Cryst. Growth 52, 219 (1981).
S. Matsumoto, Y. Sato, M. Kamo, and N. Sataka, Jpn. J. Appl. Phys. 21, L183 (1982).
A.R. Badzian and R.C. DeVries, Mater. Res. Bull. XXIII, 385 (1988).
A. Inspektor, Y. Liou, T. McKenna, and R. Messier, Surface and Coating Technol. (1989, in press).
T. Kawato and K. Kondo, Jpn. J. Appl. Phys. 26, 1429 (1987).
J. A. Mucha, D. L. Flamm, and D. E. Ibbotson, Extended Abstracts of 19th Biennial Conference on Carbon, University Park, PA, 386 (1989).
Y Saito, K. Sato, H. Tanaka, K. Fujita, and S. Matuda, J. Mater. Sci. 23, 842 (1988).
Y. Hirose and Y. Terasawa, Jpn. J. Appl. Phys. 25, L519 (1986).
H. Tanaka, K. Sato, Y. Saito, and H. Miyadera, Proc. 8th Int. Symp. on Plasma Chemistry, edited by K. Akashi and A. Kinabara (International Union of Pure and Applied Chemistry, Tokyo, Japan, 1987), Vol. 1, p. 2463.
A.R. Badzian, T. Badzian, and D. Pickrell, SPIE 969, 14 (1988).
M. Kitabatake and K. Wasa, J. Appl. Phys. 58, 1693 (1985).
P. Bachmann, W. Drawl, D. Knight, R. Weimer, and R. Messier, in Extended Abstracts No. 15, Diamond and Diamond-Like Materials Synthesis, edited by G. H. Johnson, A. R. Badzian, and M.W. Geis (Materials Research Society, Pittsburgh, PA, 1988), p. 99.
Y Liou, A. Inspektor, R. Weimer, and R. Messier, Appl. Phys. Lett. 55, 631 (1989).
Y. Liou, A. Inspektor, D. Knight, R. Weimer, D. Pickrell, A. R. Badzian, and R. Messier, Proc. SPIE 1146, 12 (1989).
A. Inspektor, T. McKenna, Y. Liou, L. Bourget, K. Spear, and R. Messier, Proc. 1st Int. Symp. on Diamond and Diamond-Like Films (The Electrochemical Society, Pennington, NJ, 1989), p. 342.
R.W. Collins, Y. Cong, Y.T. Kim, K. Vedam, Y. Liou, A. Inspektor, and R. Messier, Thin Solid Films 181, 565 (1989).
D.S. Knight and W.B. White, J. Mater. Res. 4, 385 (1989).
W. Zhu, A. R. Badzian, and R. Messier, J. Vac. Sci. Technol. A7, 2315 (1989).
R. C. DeVries, Ann. Rev. Mater. Sci. 17, 161 (1987).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Liou, Y., Inspektor, A., Weimer, R. et al. The effect of oxygen in diamond deposition by microwave plasma enhanced chemical vapor deposition. Journal of Materials Research 5, 2305–2312 (1990). https://doi.org/10.1557/JMR.1990.2305
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1990.2305