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Thermodynamic stability of binary oxides in contact with silicon

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Abstract

Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li2O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3, where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.

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  1. K. J. Hubbard

    Present address: EPI, Chorus Corporation, St. Paul, Minnesota, 55110, United States

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  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802-5005, USA

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Hubbard, K.J., Schlom, D.G. Thermodynamic stability of binary oxides in contact with silicon. Journal of Materials Research 11, 2757–2776 (1996). https://doi.org/10.1557/JMR.1996.0350

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