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Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

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Abstract

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

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Authors and Affiliations

  1. Photovoltaic Systems Group, Laboratorio de Energia Solar-IIM, Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos, Mexico

    P. K. Nair, L. Huang, M. T. S. Nair & Hailin Hu

  2. Department of Chemistry, Texas A&M University, College Station, 77843, Texas, USA

    E. A. Meyers & R. A. Zingaro

Authors
  1. P. K. Nair
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  2. L. Huang
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  3. M. T. S. Nair
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  4. Hailin Hu
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  5. E. A. Meyers
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  6. R. A. Zingaro
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Nair, P.K., Huang, L., Nair, M.T.S. et al. Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films. Journal of Materials Research 12, 651–656 (1997). https://doi.org/10.1557/JMR.1997.0099

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  • DOI: https://doi.org/10.1557/JMR.1997.0099

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