Abstract
RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.
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Iembo, A., Fuso, F., Arimondo, E. et al. Pulsed laser deposition and characterization of conductive RuO2 thin films. Journal of Materials Research 12, 1433–1436 (1997). https://doi.org/10.1557/JMR.1997.0195
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DOI: https://doi.org/10.1557/JMR.1997.0195