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Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition

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Abstract

Polycrystalline RuO2 thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO2/Si(001) and Pt/Ti/SiO2/Si(001) substrates. Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures (∼350 °C) and low growth rates (<30 Å/min) produced highly (110)-textured RuO2 films. Highly (101)-textured RuO2 films were favored at slightly lower temperatures (∼300 °C) and much higher growth rates (>30 Å/min). The most conductive RuO3 films had resistivities of 34 to 40 µΩ−cm at 25 °C, an average grain size of 65 ± 15 nm, and a surface roughness (rms) of 3 to 10 nm. Both single-phase Ru and mixed Ru/RuO2 phase material were also fabricated at low temperatures (<350 °C) by using lower oxygen flow concentrations (<10%).

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Authors and Affiliations

  1. Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, 60439, Illinois, USA

    J. Vetrone, C. M. Foster, G-R. Bai, A. Wang & X. Wu

  2. Physics Department, Northern Illinois University, DeKalb, 60115, Illinois, USA

    J. Patel & X. Wu

Authors
  1. J. Vetrone
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  2. C. M. Foster
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  3. G-R. Bai
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  4. A. Wang
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  5. J. Patel
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  6. X. Wu
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Vetrone, J., Foster, C.M., Bai, GR. et al. Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition. Journal of Materials Research 13, 2281–2290 (1998). https://doi.org/10.1557/JMR.1998.0318

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  • DOI: https://doi.org/10.1557/JMR.1998.0318

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