Abstract
Patterned epitaxial SrBi2Ta2O9 (SBT) lines with (00l) out-of-plane orientation were grown on a (001) SrTiO3 substrate by the novel “channel stamping” method. Parallel channels in a poly(dimethylsiloxane) stamp were filled with a metalorganic precursor solution by spin coating. After solvent evaporation, the solid precursor within the channels was transferred to the substrate by stamping. Stamped precursor lines were pyrolyzed at 350 °C/1 h and then heated to 850 °C/1 h. It was shown by x-ray diffraction and scanning electron microscopy that patterned SBT lines were epitaxial, had a smooth surface with c-axis out-of-plane orientation, and a single in-plane orientation.
Similar content being viewed by others
References
F. Wang and S. Leppavuori, J. Appl. Phys. 82, 1293 (1997).
A.E. M. De Veirman, J. F. M. Cillessen, M. De Keijser, R. M. Wolf, D. J. Taylor, A. A. Staals, and G. J. M. Dormans, in Epitaxial Oxide Thin Films and Heterostructures, edited by D. K. Fork, J. M. Phillips, R. Ramesh, and R. M. Wolf (Mater. Res. Soc. Symp. Proc. 341, Pittsburgh, PA, 1994), p. 329.
S. G. Ghonge, E. God, R. Ramesh, T. Sands, and V. G. Keramidas, Appl. Phys. Lett. 63, 1628 (1993).
P. Tiwari, T. Zheleva, and J. Narayan, Appl. Phys. Lett. 63, 30 (1993).
J. Lee, L. Johnson, A. Safari, R. Ramesh, T. Sands, H. Gilchrist, and V. G. Keramidas, Appl. Phys. Lett. 63, 27 (1993).
C. Bjormander, A. M. Grishin, B. M. Moon, J. Lee, and K. V. Rao, Appl. Phys. Lett. 64, 3646 (1994).
P. H. Ansari and A. Safari, Int. Ferroelectrics 7, 185 (1995).
C. M. Foster, G-R. Bai, R. Csencsits, J. Vetrone, R. Jammy, L. A. Wills, E. Carr, and J. Amano, J. Appl. Phys. 81, 2349 (1997).
M. de Keijser, J.F. M. Cillessen, R. B. F. Janssen, A. E. M. de Veirman, and D. M. de Leeuw, J. Appl. Phys. 79, 393 (1996).
M. Suga, M. Hiratani, C. Okazaki, M. Koguchi, H. Kakibayashi, Int. Ferroelectrics 18, 389 (1997).
C. B. Eom, R. B. Van Dover, J. M. Phillips, D. J. Werder, J. H. Marshall, C. H. Chen, R. J. Cava, R. M. Fleming, and D. K. Fork, Appl. Phys. Lett. 63, 2570 (1993).
G. Yi, Z. Wu, and M. Sayer, J. Appl. Phys. 65, 2717 (1988).
T. Hase and T. Shiosaki, Jpn. J. Appl. Phys. 30, 2159 (1991).
K. Aoki, I. Murayama, Y. Fukuda, and A. Nixhimura, Jpn. J. Appl. Phys. 36, L690 (1997).
K. D. Budd, S. K. Dey, and D. A. Payne, Brit. Ceram. Proc. 36, 107 (1985); K. D. Budd, Ph.D. Thesis, University of Illinois at Urbana-Champaign (1986).
A. Seifert, F. F. Lange, and J. Speck, J. Mater. Res. 10, 680 (1995).
R. Takayama and Y. Tomita, J. Appl. Phys. 65, 1666 (1989).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kim, J.H., Lange, F.F. & Cheon, CI. Epitaxial Growth of Patterned SrBi2Ta2O9 Lines by Channel Stamping. Journal of Materials Research 14, 1194–1196 (1999). https://doi.org/10.1557/JMR.1999.0161
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1999.0161