Imprint and Fatigue Properties of Chemical Solution Derived Pb_1–-xLa_x(Zr_yTi_1–y)_1–x/4O₃ Thin Films

Abstract

We have investigated the effect of oxygen vacancies on imprint and fatigue behavior of the PLZT thin films. It is found that the compensation of oxygen vacancies with various dopant concentrations and electrode structures is an important process parameter in determining the tendency to imprint and fatigue. In the case of PLZT thin films, the voltage shifts related to imprint are attributed to the trapping of electrons at ionic defect sites such as oxygen vacancies near the film/electrode interface, the magnitude of polarization, and concentration of defect-dipole complexes involving oxygen vacancies such as V′_Pb–V^••o. The strong dependence of fatigue rate on electrode material for PLZT thin films is due to the effect of the ferroelectric/electrode interaction on the pinning and/or unpinning rate involving the accumulation of oxygen vacancies near the film/electrode interface during fatigue cycling. By using RuO₂ as the top and/or bottom electrode instead of Pt, improved fatigue properties are obtained compared to Pt/PLZT/Pt capacitors. This is because a reduced accumulation of oxygen vacancies near the interface by the oxide electrode such as RuO₂ may reduce the electronic charge trapping and, consequently, lead to less domain wall pinning.