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Enhancement of the 1.31-μm emission properties of Dy3+-doped Ge–Ga–S glasses with the addition of alkali halides

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Abstract

Alkali halides such as KBr, KI, CsBr, and CsI were added to Dy3+-doped Ge–Ga–S glasses, and their effects on the 1.31-μm emission property were investigated. The intensities of the 1.31-μm emission (6F11/2 · 6H9/26H15/2) increased at the expense of the 1.75-μm emission intensity (6H11/26H15/2) with the alkali halide addition. The lifetimes of the 1.31-μm emission level also increased as much as 35 times from 38 μs for Ge–Ga–S glass to 1320 μs for the glass containing 10 mol% CsBr. These enhancements occurred only when the ratio of MX (M = K, Cs; X = Br, I)/Ga was equal to or larger than unity. Raman spectra of Ge–Ga–S–CsBr glasses indicated the formation of [GaS3/2Br] complexes, which provide the preferred sites for Dy3+. Due to this new local environment of Dy3+, the multiphonon relaxation rates from the Dy3+:6F11/2 · 6H9/2 level decreased by approximately four orders of magnitude. The enhancement in the 1.31-μm emission properties with alkali halide addition supports the potentials of these glasses as hosts for the Dy3+-doped fiber-optic amplifiers.

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Shin, Y.B., Heo, J. & Kim, H.S. Enhancement of the 1.31-μm emission properties of Dy3+-doped Ge–Ga–S glasses with the addition of alkali halides. Journal of Materials Research 16, 1318–1324 (2001). https://doi.org/10.1557/JMR.2001.0184

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  • DOI: https://doi.org/10.1557/JMR.2001.0184

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