Abstract
Deep donor levels in ZnO single crystals doped with transition metal (TM; Co or Mn) were characterized by isothermal capacitance transient spectroscopy (ICTS) applied to ZnO-based Schottky junctions, Au/ZnO (0001) or Ag/ZnO (0001). The barrier height at the junction and donor concentration was not influenced by TM. A deep donor level at 0.28 eV was detected by ICTS; however, its energy dispersion and concentration was composition independent. The effect of doping with TM was found in the magnitude of leakage current; in other words, the leakage current at the Au/ZnO:Mn junction was lower than the other junctions on undoped or Co-doped crystals.
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M. Matsuoka, Jpn. J. Appl. Phys. 10, 736 (1971).
K. Mukae, T. Tsuda, and I. Nagasawa, Jpn. J. Appl. Phys. 16, 1361 (1977).
G.D. Mahan, L.M. Levinson, and H.R. Philipp, J. Appl. Phys. 50, 2799 (1979).
P.L. Hower and T.K. Gupta, J. Appl. Phys. 50, 4847 (1979).
R. Einzinger, Appl. Surf. Sci. 1, 329 (1978).
G.E. Pike and C.H. Seager, J. Appl. Phys. 50, 3414 (1979).
G. Blatter and F. Greuter, Phys. Rev. B, B33, 3952 (1986).
Y-M. Chiang, W.D. Kingery, and L.M. Levinson, J. Appl. Phys. 53, 1765 (1982).
S. Tanaka, C. Akita, N. Ohashi, J. Kawai, H. Haneda, and J. Tanaka, J. Solid State Chem. 105, 36 (1993).
N. Ohashi, S. Tanaka, T. Tsurumi, J. Tanaka, and O. Fukunaga, J. Ceram. Soc. Jpn. 106, 914 (1998).
S. Tanaka and K. Takahashi, Key Eng. Mater. 157–158, 241 (1998).
U. Schwing and B. Hoffmann, J. Appl. Phys. 57, 5372 (1985).
Y. Yano and H. Morooka, J. Ceram. Soc. Jpn. 102, 305 (1994).
N. Ohashi, Y. Terada, T. Ohgaki, T. Tsurumi, O. Fukunaga, H. Haneda, and J. Tanaka, J. Korean Phys. Soc. 35, S213 (1999).
N. Ohashi, Y. Terada, T. Ohgaki, S. Tanaka, T. Tsurumi, O. Fukunaga, H. Haneda, and J. Tanaka, Jpn. J. Appl. Phys. 38, 5028 (1999).
J.F. Cordaro, Y. Shim, and J.E. May, J. Appl. Phys. 60, 4186 (1986).
M.H. Sukkar and H.L. Tuller, in Advance in Ceramics, ed. M.F. Yan and A.H. Heuer (American Ceramics Society, OH, 1980).
K. Tsuda and K. Mukae, J. Ceram. Soc. Jpn. 97, 1211 (1989).
T. Maeda and M. Takata, J. Ceram. Soc. Jpn. 97, 1219 (1989).
A. Nitayama, H. Sasaki, and T. Ikoma, Jpn. J. Appl. Phys. 19, L743 (1989).
J.C. Simpson and J.F. Cordaro, J. Appl. Phys. 63, 1781 (1988).
H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, Appl. Phys. Lett. 77, 475 (2000).
P. Yu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, J. Cryst. Growth, 184–5, 601 (1998).
D.C. Reynolds, D.C. Look, and B. Jogai, J. Solid State Commun. 99, 869 (1996).
K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tailant, J.A. Voigt, and B.E. Grande, J. Appl. Phys. 79, 7983 (1996).
N. Ohashi, T. Nakata, T. Sekiguchi, H. Hosono, M. Mizuguchi, T. Tsurumi, J. Tanaka, and H. Haneda, Jpn. J. Appl. Phys. 38, L113 (1999).
K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39, L555 (2000).
J.W. Nielsen and E.F. Dearborn, J. Am. Ceram. Soc. 64, 1762 (1960).
H. Okushi and Y. Tokumaru, Jpn. J. Appl. Phys. 19, L335 (1980).
N. Ohashi, T. Sekiguchi, H. Haneda, Y. Terada, T. Ohgaki, T. Tsurumi, J. Tanalka, and O. Fukunaga, Key Eng. Mater. 157–158, 227 (1998).
S. Tanaka, N. Ohashi, K. Takahashi, and J. Takana, BUNSEKI 47, 1021 (1998).
S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (John Wiley and Sons, New York, 1981) p. 279.
R.C. Neville and C.A. Mead, J. Appl. Phys. 41, 3795 (1970).
H. Moormann, D. Kohl, and G. Heiland, Surf. Sci. 100, 302 (1980).
A.M. Cowley and S.M. Sze, J. Appl. Phys. 36, 3212 (1965).
N. Ohashi (unpublished).
C.Y. Chang and S.M. Sze, Solid State Electron. 13, 2685 (1970).
G.L. Roberts and C.R. Crowell, Solid State Electron. 16, 29 (1973).
W. Hirschwald, P. Bonasewicz, L. Ernst, M. Grade, D. Hofmann, S. Krebs, R. Littbarski, G. Neumann, M. Grunze, D. Kolb, and H.J. Schulz, Current Topics in Materials Science, edited by Kaldis (North-Holland, Holland), Vol. 7, Chap. 3, p. 153.
H. Haneda, J. Tanaka, S. Hishita, T. Ohgaki, and N. Ohashi, Key Eng. Mater. 157–158, 221 (1998).
F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990).
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Ohashi, N., Tanaka, J., Ohgaki, T. et al. Isothermal capacitance transient spectroscopy for deep levels in Co- and Mn-doped ZnO single crystals. Journal of Materials Research 17, 1529–1535 (2002). https://doi.org/10.1557/JMR.2002.0227
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DOI: https://doi.org/10.1557/JMR.2002.0227