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Isothermal capacitance transient spectroscopy for deep levels in Co- and Mn-doped ZnO single crystals

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Abstract

Deep donor levels in ZnO single crystals doped with transition metal (TM; Co or Mn) were characterized by isothermal capacitance transient spectroscopy (ICTS) applied to ZnO-based Schottky junctions, Au/ZnO (0001) or Ag/ZnO (0001). The barrier height at the junction and donor concentration was not influenced by TM. A deep donor level at 0.28 eV was detected by ICTS; however, its energy dispersion and concentration was composition independent. The effect of doping with TM was found in the magnitude of leakage current; in other words, the leakage current at the Au/ZnO:Mn junction was lower than the other junctions on undoped or Co-doped crystals.

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Correspondence to Naoki Ohashi.

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Ohashi, N., Tanaka, J., Ohgaki, T. et al. Isothermal capacitance transient spectroscopy for deep levels in Co- and Mn-doped ZnO single crystals. Journal of Materials Research 17, 1529–1535 (2002). https://doi.org/10.1557/JMR.2002.0227

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  • DOI: https://doi.org/10.1557/JMR.2002.0227

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