Abstract
In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the \({{\rm{E}}_2}^{(2)}\) Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.
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Tiwari, A., Park, M., Jin, C. et al. Epitaxial growth of ZnO films on Si(111). Journal of Materials Research 17, 2480–2483 (2002). https://doi.org/10.1557/JMR.2002.0361
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DOI: https://doi.org/10.1557/JMR.2002.0361