Abstract
More than 2500 indentations were made on a silicon wafer surface using a range of different unloading rates and maximum applied loads. The unloading curves were examined for characteristic events (pop-out, kink pop-out, elbow followed by pop-out, and elbow) that were assigned to different phase transitions within the affected material based on Raman microspectroscopy analysis of residual imprints. The effect of unloading rate and maximum applied load on the average contact pressure at the beginning of the event was found. A permissible range for each event to occur was established.
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Juliano, T., Gogotsi, Y. & Domnich, V. Effect of indentation unloading conditions on phase transformation induced events in silicon. Journal of Materials Research 18, 1192–1201 (2003). https://doi.org/10.1557/JMR.2003.0164
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DOI: https://doi.org/10.1557/JMR.2003.0164